Bi-3: bi-3-Dilute Bismides for 3rd Generation Solar Cells
Research project selected under the 2015 call for proposals
Principal Investigator :
Hélène Carrère ()
LPCNO (équipe Optoélectronique Quantique)
Type of project : Collaborative Project
Partner team(s) :
LNCMI
CEMES (équipe Nano-Matériaux)
Date (start/end) : 2016 - 2019
Photoluminescence spectra of GaAsBi epilayers at room temperature for different bismuth fractions. The introduction of bismuth in gallium-arsenide matrix leads to a strong decrease of the band gap energy and opens possible ways of tuning absorption in the near infra-red spectrum range.
Abstract
Dilute bismide semiconductor alloys are key materials for the development of third generation solar cells, thanks to their remarkable electronic properties. Indeed, they offer both a large tunability of band gap energy in the near infra-red range, and make possible the demonstration of intermediate band solar cell operation in simple geometry structures. The three NEXT partners involved in Bi-3 (LPCNO, CEMES and LNCMI) have a strong expertise in semiconductor physics and LPCNO has recently led pioneering studies on spin properties of these alloys. In the three coming years we aim at giving a thorough description of the electronic and transport properties of these alloys. We will address three major challenges to the realization of photovoltaic devices, namely (i) provide a description of the electronic band structure; (ii) identify localization effects and how they influence oscillator strength and carriers' mobilities; (iii) characterize transport properties. This will be realized by means of Raman and photoluminescence spectroscopy as well as high field magnetotransport experiments, leading to the comprehensive description of these materials which is required for further development of photovoltaic applications.